Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1998, Pages 209-212

  Kosaka, Yukiko ^a   Eriguchi, Koji ^a   Yamada, Takayuki ^a  

^a Central Clinic   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRIC CURRENTS; GATES (TRANSISTOR); PLASMA ETCHING; REACTIVE ION ETCHING; STRESSES;

GATE OXIDE CHARGING; INDUCTIVELY COUPLED PLASMA (ICP) TREATMENT; MAGNETICALLY ENHANCED REACTIVE ION ETCHING (MERIE);

MOSFET DEVICES;

EID: 0032255563     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)