Commercial impact of silicon carbide

IEEE Industrial Electronics Magazine

Volumn 2, Issue 3, 2008, Pages 19-31

  Singh, Ranbir ^a,b   Pecht, Michael ^c  

^a Arkansas Power Electronics International Inc   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c University of Wisconsin Madison   (United States)

Author keywords

Fasteners; JFETs; Materials; MOSFETs; Schottky diodes; Silicon; Silicon carbide

Indexed keywords

ELECTRIC EQUIPMENT; ELECTRIC POWER SYSTEMS; ELECTRIC POWER TRANSMISSION NETWORKS; LIGHT EMITTING DIODES; MOSFET DEVICES; POWER QUALITY; POWER TRANSMISSION; SCHOTTKY BARRIER DIODES; SILICON; SILICON CARBIDE;

BANDGAP MATERIALS; BULK MOBILITIES; DEVICE DESIGNS; EVOLUTIONARY IMPROVEMENTS; HIGH FREQUENCIES; HIGH VOLTAGES; JFETS; MATERIAL QUALITIES; MILITARY HARDWARES; MOSFETS; PERFORMANCE LIMITS; POWER DENSITIES; POWER DEVICES; POWER SYSTEMS; PROCESSING TECHNIQUES; PROMISING APPROACHES; SCHOTTKY DIODES; SI MATERIALS; VOLTAGE DROPT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54049156508     PISSN: 19324529     EISSN: None     Source Type: Journal    
DOI: 10.1109/MIE.2008.928617     Document Type: Article

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