Electronic properties of the SiC-SiO2 interface and related systems

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1997, Pages 101-110

  Ouisse, Thierry ^a   Bano, Edwige ^a  

^a Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); SEMICONDUCTOR DOPING; SILICA; SILICON CARBIDE;

WET OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030638078     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)