Stacked high voltage switch based on SiC VJFETs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 139-142

  Friedrichs, Peter ^a   Mitlehner, Heinz ^a   Schörner, Reinhold ^a   Dohnke, Karl Otto ^a   Elpelt, Rudolf ^a   Stephani, Dietrich ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; SILICON CARBIDE;

HIGH VOLTAGE SWITCHES;

ELECTRIC SWITCHES;

EID: 0042432050     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. G.Y Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, J.W. Palmour, "Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide" IEEE Electron Device Letters, vol. 22, no.4, 2001, p.76-178
2. P.Friedrichs, H.Mitlehner, R.Schörner, K.O. Dohnke, R.Elpelt, and D.Stephani, "Application oriented unipolar switching SiC devices", Materials Science Forum, Vol. 389-393 (2002), pp.1185-1190.
3. P. Friedrichs, H. Mitlehner, R. Schörner, K.O. Dohnke, R. Elpelt and D. Stephani, "The vertical silicon carbide JFET - a fast and low loss solid state power switching device", Proceedings of the EPE 2001, in Graz, Austria, August 2001
4. P.Friedrichs, H.Mitlehner, R.Schörner, K.O. Dohnke, R.Elpelt, and D.Stephani, "High voltage, modular switch based on SiC VJFETs - first results for a fast 4,5kV/1,2Ω configuration", presented at the ECSCRM2002 in Linköping, September 2002
5. Stengl/Tihanyi, "Leistungs-MOSFET Praxis", Pflaum Verlag München, 1992, p. 190
6. P.Friedrichs, H.Mitlehner, W.Bartsch, K.O. Dohnke, R.Kaltschmidt, U.Weinert, B.Weis, D.Stephani, "Static and dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories", Materials Science Forum, Vol. 338-342 (2000), pp.1243-1246.