Application-oriented unipolar switching SiC devices

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1185-1190

  Friedrichs, Peter ^a   Mitlehner, Heinz ^a   Schörner, Reinhold ^a   Dohnke, Karl Otto ^a   Elpelt, Rudolf ^a   Stephani, Dietrich ^a  

^a SIEMENS AG   (Germany)

Author keywords

Application; High voltage; JFETs; MOSFETs; SiC devices

Indexed keywords

APPLICATIONS; COMMERCE; JUNCTION GATE FIELD EFFECT TRANSISTORS; SILICON CARBIDE; ELECTRIC POTENTIAL; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS; SWITCHING;

APPLICATION-ORIENTED; COMMERCIAL APPLICATIONS; HIGH VOLTAGE; JUNCTION FIELD EFFECT TRANSISTORS; MATERIAL DEVELOPMENT; MOSFETS; SIC DEVICES; UNIPOLAR SWITCHING; BLOCKING VOLTAGES;

MOSFET DEVICES; SEMICONDUCTOR DEVICES;

EID: 0036433843     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1185     Document Type: Conference Paper

References (10)

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6. P. Friedrichs, H. Mitlehner, W. Bartsch, K.O. Dohnke, R. Kaltschmidt, U. Weinert, B. Weis, D. Stephani, “Static and dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories”, Materials Science Forum, Vol. 338-342 (2000), pp. 1243-1246.
7. Peter Friedrichs, Heinz Mitlehner, Reinhold Schdmer, Karl-Otto Dohnke, Rudolf Elpelt and Dietrich Stephani, “The vertical silicon carbide JFET - a fast and low loss solid state power switching device “, Proceedings of the EPE 2001, in Graz, Austria, August 2001
8. P. Friedrichs, H. Mitlehner, D. Peters, K.O. Dohnke, R. Schörner, U. Weinert, E. Baudelot, D. Stephani, “SiC power devices with low on-resistance for fast switching applications“, Proceedings of the ISPSD 2000, Toulouse, May 22-24,2000.
9. see datasheet at htto://www.infineon.com
10. Schwegmann, M., Kamp, Peter, Weis, B.: “Voltage Sourced Converter for HVDC Application”, Proceedings of the EPE 2001, in Graz, Austria, August 2001