Electrical impact of SiC structural crystal defects on high electric field devices

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Neudeck, Philip G ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; DISLOCATIONS (CRYSTALS); INCLUSIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

AVALANCHE BREAKDOWN; EPILAYER GROWTH PITS;

SILICON CARBIDE;

EID: 18844479353     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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