Analysis of Fowler-Nordheim injection in NO nitrided gate oxide grown on n-type 4H-SiC

2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings

Volumn 1, Issue , 2000, Pages 331-333

  Li, Hui Feng ^a   Dimitrijev, Sima ^a   Sweatman, Denis ^a   Harrison, H Barry ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON INJECTION; MICROELECTRONICS; MOS DEVICES; SILICON CARBIDE; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; GATES (TRANSISTOR); MOSFET DEVICES; NITROGEN OXIDES; NUMERICAL ANALYSIS; OXIDATION; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS; ALUMINUM NITRIDE; TEMPERATURE DISTRIBUTION;

ELECTRON-INJECTION BARRIER; FOWLER-NORDHEIM; FOWLER-NORDHEIM INJECTION; GATE OXIDE; HIGH ELECTRIC FIELDS; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; THEORETICAL VALUES; ELECTRON INJECTION; NITRIDED;

GATES (TRANSISTOR); ELECTRON TUNNELING; SILICON CARBIDE;

EID: 3142657542     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2000.840582     Document Type: Conference Paper

References (7)

1. 2;', J. Appl. Phys., 40(1), 278 (1965)
2. R. J. Trew, J. B. Yan, and P. M. Mock, " The potential of diamond and Sic electronic devices for microwave and millimeter-wave power applications", Proc. IEEE 79, 598-1991
3. 2 interfaces", J Appl. Phys., 79(6), 3108(1996)
4. E. Bano, T. Ouisse, P. Lasagne, T. Billon, and C. Jaussaud, "High temperature dependence of Fowler-Nordheium emission tunneling current in (6H) and (4H) Sic MOS capacitors", Silicon Carbide and Related, Materials 1995 Cod., Kyoto, Japan, Inst. Phys. Conf. Ser. 142, 733 (1996)
5. A. K. Agarwal, S. Seshadri, L. B. Rowland, "Temperature dependence of Fowler-Nordheium current in 6H- and 4H-Sic MOS capacitors", ZEEE Electron Device Lett., 18(12), 592 (1 997)
6. G. Panannkakis, G. Ghibaudo, R. Kies, and G. Papadas, "Temperature dependence of the Fowler-Nordheium current in metal-oxide- degenerate semiconductor structures", J. Appl. Phys., 78(4), 2635( 1995)
7. 2lSiC interfaces by X-ray photoelectron spectroscopy", submitted to J Appl. Phys.