A JBS diode with controlled forward temperature coefficient and surge current capability

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1129-1132

  Dahlquist, F ^a,b   Lendenmann, H ^a   Ostling M ^b  

^a ABB CORPORATE RESEARCH   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

Device design; Forward temperature coefficient; JBS rectifier; Power rectifier; Schottky rectifiers; Surge current

Indexed keywords

DIODES; ECONOMIC AND SOCIAL EFFECTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; TEMPERATURE DISTRIBUTION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; THERMAL EFFECTS;

DEVICE DESIGN; JBS RECTIFIER; POWER RECTIFIERS; SCHOTTKY RECTIFIERS; SURGE CURRENT; TEMPERATURE COEFFICIENT; SURGE CURRENTS;

ELECTRIC RECTIFIERS; SCHOTTKY BARRIER DIODES;

EID: 0036436385     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1129     Document Type: Conference Paper

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