Reverse leakage current calculations for SiC Schottky contacts

IEEE Transactions on Electron Devices

Volumn 43, Issue 12, 1996, Pages 2305-2307

  Crofton, J ^a   Sriram, S ^b  

^a MURRAY STATE UNIVERSITY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRON TUNNELING; GATES (TRANSISTOR); NUMERICAL METHODS; PROBABILITY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; THERMAL EFFECTS;

METAL GATES; REVERSE CURRENT DENSITY; REVERSE LEAKAGE CURRENT; SILICON CARBIDE SCHOTTKY CONTACTS; THERMIONIC EMISSION THEORY;

LEAKAGE CURRENTS;

EID: 0030379084     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.544427     Document Type: Article

References (11)

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