7.4 kV, 330 A (pulsed), single chip, high temperature 4H-SiC pin rectifier

Electronics Letters

Volumn 38, Issue 25, 2002, Pages 1738-1739

  Singh, R ^a   Capell, D C ^a   Irvine, K G ^a   Richmond, J T ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE PROPERTIES; INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE;

FORWARD VOLTAGE DROP; REVERSE RECOVERY MEASUREMENTS;

ELECTRIC RECTIFIERS;

EID: 0037028226     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20021108     Document Type: Article

References (6)

1. SINGH, R., IRVINE, K.G., KORDINA, O., PALMOUR, J.W., LEVINSHTEIN, M.E., and RUMYANETSEV, S.L.: '4H-SiC bipolar pin diodes with 5.5 kV blocking voltage'. Proc. Device Research Conf., Charlottesville, VA, USA, June 1998, pp. 86-87
2. ROTTNER, K., SCHÖNER, A., FRISCHHOLZ, M., SVEDBERG, J.-O., GUSTAFSSON, U., ELLISON, A., JANZEN, E., and KORDINA, O.: 'Design and implementation of a 3.4 kV ion implanted p-i-n rectifier in 4H SiC'. Abstracts of Int. Conf. on Silicon Carbide, III-nitrides and Related Materials, Stockholm, Sweden, August-September 1997, pp. 136-137
3. MITLEHNER, H., FRIEDRICHS, P., PETERS, D., SCHORNER, R., WEINERT, U., WEIS, B., and STEPHANI, D.: 'Switching behavior of fast high voltage SiC pn diodes'. Proc. Int. Symp. on Semiconductor Power Devices and ICs (ISPSD), Kyoto, Japan, June 1998, pp. 127-130
4. FEDISON, J.B., RAMUNGUL, N., CHOW, T.P., GHEZZO, M., and KRETCHMER, J.W.: 'Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers', IEEE Electron Device Lett., 22, (3), 2001, pp. 130-132
5. SINGH, R., COOPER, J.A., MELLOCH, M.R., CHOW, T.P., and PALMOUR, J.W.: 'SiC power Schottky and pin diodes', IEEE Trans. Electron Devices, 49, (4), 2002, pp. 665-672
6. SINGH, R., and PALMOUR, J.W.: 'Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields'. Proc. Int. Symp. on Semiconductor Power Devices and ICs (ISPSD), Weimar, Germany, May 1997, pp. 157-160