4H-SiC npn bipolar junction transistors with BVCEO > 3,200 V

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 57-60

  Huang, Chih Fang ^a   Cooper Jr , James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HYDROGEN; SILICON CARBIDE; THERMAL EFFECTS;

BIPOLAR JUNCTION TRANSISTORS (BJT);

BIPOLAR TRANSISTORS;

EID: 0036045599     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. The future of bipolar power transistors
2. 1800 V npn bipolar junction transistors in 4H-SiC
3. An implanted-emitter 4H-SiC bipolar transistor with high current gain