3kV 600A 4H-SiC high temperature diode module

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 245-248

  Sugawara, Y ^a   Takayama, D ^a   Asano, K ^a   Singh, R ^a   Kodama, H ^a   Ogata, S ^a   Hayashi, T ^a  

^a KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC POWER SYSTEMS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; LEAKAGE CURRENTS; MICROPROCESSOR CHIPS; OXIDATION; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SWITCHING; THERMAL EXPANSION;

HIGH TEMPERATURE DIODE MODULES;

SEMICONDUCTOR DIODES;

EID: 0036045988     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)