Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3

Applied Physics Letters

Volumn 72, Issue 1, 1998, Pages 82-84

  Grandjean, N ^a   Massies, J ^a   Leroux, M ^a   Lorenzini, P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; HIGH ENERGY ELECTRON DIFFRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SPECTROSCOPY;

HALL MEASUREMENTS; OPTICAL REFLECTIVITY; SECOND ION MASS SPECTROSCOPY;

LIGHT EMITTING DIODES;

EID: 0032484464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120651     Document Type: Article

References (26)

1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997).
2. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
3. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L212 (1989).
4. T. D. Moustakas, Mater. Res. Soc. Symp. Proc. 395, 111 (1996).
5. H. Riechert, A. Averbeck, U. Barnhöfer, A. Graber, and H. Tews, IX European Workshop on Molecular Beam Epitaxy, 6-10 April, Oxford, United Kingdom (1997) (unpublished).
6. W. Kim, Ö. Aktas, A. E. Botcharev, A. Salavdor, S. N. Mohammad, and H. Morkoç, J. Appl. Phys. 79, 7657 (1996).
7. Z. Yang, L. K. Li, and W. I. Wang, Appl. Phys. Lett. 67, 1686 (1995).
8. N. Grandjean, M. Leroux, M. Laügt, and J. Massies, Appl. Phys. Lett. 71, 240 (1997).
9. R. J. Molnar, R. Singh, and T. D. Moustakas, Appl. Phys. Lett. 66, 268 (1995).
10. O. Aktas, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, and H. Morkoç, Electron. Lett. 31, 1389 (1995).
11. N. Grandjean, J. Massies, and M. Leroux, Appl. Phys. Lett. 69, 2071 (1996).
12. C.-Y. Hwang, M. J. Schurman, W. E. Mayo, Y.-C. Lu, R. A. Stall, and T. Salagaj, J. Electron. Mater. 26, 243 (1997).
13. W. Kim, A. E. Botchkarev, A. Salvador, G. Popovici, H. Tang, and H. Morkoç, J. Appl. Phys. 82, 219 (1997).
14. E. F. Schubert, I. D. Goepfert, W. Grieshaber, and J. M. Redwing, Appl. Phys. Lett. 71, 921 (1997).
15. I.-H. Lee, I.-H. Choi, C. R. Lee, and S. K. Noh, Appl. Phys. Lett. 71, 1359 (1997).
16. T. D. Moustakas and R. J. Molnar, Mater. Res. Soc. Symp. Proc. 281, 753 (1993).
17. C. Wang and R. F. Davis, Appl. Phys. Lett. 63, 990 (1993).
18. M. E. Lin, G. Xue, G. L. Zhou, J. E. Green, and H. Morkoç, Appl. Phys. Lett. 63, 932 (1993).
19. J. M. Myoung, K. H. Shim, C. Kim, O. Gluschenkov, K. Kim, S. Kim, D. A. Turnbull, and G. Bishop, Appl. Phys. Lett. 69, 2722 (1996).
20. T. S. Cheng, C. T. Foxon, N. J. Jeffs, D. J. Dewsnip, L. Flannery, J. W. Orton, S. V. Novikov, B. Ya Ber, and Y. A. Kudriavtsev, MRS Internet J. Nitride Semicond. Res. 2, 4 (1997).
21. W. Kim, A. Salvador, A. E. Botchkarev, Ö. Aktas, S. N. Mohammad, and H. Morkoç, Appl. Phys. Lett. 69, 559 (1996).
22. M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, Mater. Sci. Eng. B (in press).
23. J. Neugebauer and C. Van de Walle, in Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore, 1996), p. 2849.
24. R. P. Vaudo, I. D. Goepfert, T. D. Moustakas, D. M. Beyea, T. J. Frey, and K. Meehan, J. Appl. Phys. 79, 2779 (1996).
25. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 28, L2112 (1989).
26. M. Kamp, M. Mayer, A. Pelzmann, and K. J. Ebeling, MRS Internet J. Nitride Semicond. Res. 2, 26 (1997).