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Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

Epitaxial GaN nanorods free from strain and luminescent defects

(7) Seo, H W a Chen, Q Y a Iliev, M N a Tu, L W b Hsiao, C L b Mean, James K a Chu, Wei Kan a

a University of Houston (United States)

b NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BACKSCATTER DIFFRACTION; NANORODS; STRAIN RELAXATION;

CATHODOLUMINESCENCE; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; ELECTRON DIFFRACTION; EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS;

NANOSTRUCTURED MATERIALS;

EID: 33646129892 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2190269 Document Type: Article

Times cited : (28)

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