The recombination mechanism of Mg-doped GaN nanorods grown by plasma-assisted molecular-beam epitaxy

Nanotechnology

Volumn 17, Issue 3, 2006, Pages 913-916

  Park, Y S ^a   Na, J H ^b   Taylor, R A ^b   Park, C M ^a   Lee, K H ^b   Kang, T W ^a  

^a Dongguk University   (South Korea)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SILICON;

ACCEPTOR COMPLEXES; BLUE EMISSION; NANORODS; OPTICAL TRANSITIONS;

NANOSTRUCTURED MATERIALS;

EID: 31044446818     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/3/049     Document Type: Article

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