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Volumn 93, Issue 1-3, 2002, Pages 112-122

Optical characterization of III-nitrides

(10) Monemar, B a Paskov, P P a Paskova, T a Bergman, J P a Pozina, G a Chen, W M a Hai, P N c Buyanova, I A a Amano, H b Akasaki, I b

a LINKÖPING UNIVERSITY (Sweden)

b MEIJO UNIVERSITY (Japan)

c NONE

Author keywords

Acceptors; AlGaN; Defects; Donors; Excitons; GaN; InGaN; Photoluminescence

Indexed keywords

CRYSTAL DEFECTS; EXCITONS; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

OPTICAL CHARACTERIZATION;

GALLIUM NITRIDE;

EID: 0037198503 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(02)00006-5 Document Type: Conference Paper

Times cited : (32)

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