Nanoscale ultraviolet-light-emitting diodes using wide-bandgap gallium nitride nanorods

Advanced Materials

Volumn 15, Issue 7-8, 2003, Pages 567-569

  Kim, Hwa Mok ^a   Kang, Tae Won ^a   Chung, Kwan Soo ^b  

^a Dongguk University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; ELECTRON ENERGY LEVELS; HYDRIDES; LIGHT EMITTING DIODES; NANOSTRUCTURED MATERIALS; NITROGEN; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET DEVICES; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY; NANOSCALE ULTRAVIOLET LIGHT EMITTING DIODES; WIDE BANDGAP CURRENT RECTIFIERS; WIDE BANDGAP GALLIUM NITRIDE NANORODS;

GALLIUM NITRIDE;

EID: 0038443006     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200304554     Document Type: Article

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