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Volumn 180, Issue 1, 2000, Pages 403-407
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Optical properties of cubic GaN grown on 3C-SiC (100) substrates by metalorganic vapor phase epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
ENERGY GAP;
EXCITONS;
METALLORGANIC VAPOR PHASE EPITAXY;
MORPHOLOGY;
NUMERICAL METHODS;
OPTICAL PROPERTIES;
SILICON CARBIDE;
STRAIN;
SURFACES;
TEMPERATURE;
THERMAL EXPANSION;
X RAY DIFFRACTION ANALYSIS;
BUFFER LAYERS;
CUBIC GALLIUM NITRIDE;
RESIDUAL STRAIN;
THERMAL EXPANSION COEFFICIENTS;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0034224763
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/1521-396X(200007)180:1<403::AID-PSSA403>3.0.CO;2-A Document Type: Article |
Times cited : (13)
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References (14)
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