Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire

Physical Review B - Condensed Matter and Materials Physics

Volumn 57, Issue 12, 1998, Pages 7066-7070

  Pau, S ^a   Liu, Z ^a   Kuhl, J ^a   Ringling, J ^b   Grahn, H ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000265775     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.7066     Document Type: Article

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