Cathodoluminescence and transmission electron microscopy study of the influence of crystal defects on optical transitions in GaN

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 325-339

  Salviati, G ^a   Albrecht, M ^b   Zanotti Fregonara, C ^a   Armani, N ^a   Mayer, M ^d   Shreter, Y ^e   Guzzi, M ^c   Melnik, Yu V ^e   Vassilevski, K ^e   Dmitriev, V A ^e,f   Strunk, H P ^b  

^a CNR   (Italy)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c UNIVERSITY OF MILAN   (Italy)

^d UNIVERSITY OF ULM   (Germany)

^e IOFFE INSTITUTE   (Russian Federation)

^f HOWARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EXCITONS; NITRIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; OPTICAL TRANSITION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032755315     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<325::AID-PSSA325>3.0.CO;2-1     Document Type: Article

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