The effect of metallization layers on single event susceptibility

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2189-2193

  Kobayashi, A S ^a,b   Ball, D R ^a,b   Warren, K M ^a,b   Reed, R A ^a,b   Haddad, N ^a,c   Mendenhall, M H ^a,b   Schrimpf, R D ^a,b   Weller, R A ^a,b  

^a IEEE   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c BAE SYSTEMS   (United States)

Author keywords

Energy deposition; Geant4; Ion track; Metal oxide semiconductor (MOS); Metallization layers; Monte Carlo simulation; Radiation effects; Single event effects; Tungsten

Indexed keywords

ENERGY DEPOSITION; GEANT4; ION TRACK; METAL-OXIDE SEMICONDUCTOR (MOS); METALLIZATION LAYERS; SINGLE-EVENT EFFECTS;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; MONTE CARLO METHODS; RADIATION EFFECTS; TUNGSTEN;

METALLIZING;

EID: 33144484871     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860688     Document Type: Conference Paper

References (9)

1. S. Agostinelli et al., "GEANT4 - A simulation toolkit," Nuclear Instruments and Methods in Physics Research, Section A (Accelerators, Spectrometers, Detectors and Associated Equipment), vol. 506, p. 250, 2003.
2. TCAD Tools, Synopsys, Fremont, CA, 2004.
3. R. A. Weller, A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and D. M. Fleetwood, "Evaluating average and atypical response in radiation effects simulations," IEEE Trans. Nucl. Sci., vol. 50, pp. 2265-2271, 2003.
4. A. S. Kobayashi, A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, and R. A. Weller, "Spatial and temporal characteristics of energy deposition by protons and alpha particles in silicon," IEEE Trans. Nucl. Sci., vol. 51, p. 3312, 2004.
5. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids. New York: Pergamon, 1985.
6. C. L. Howe, R. Weller, R. Reed, M. Mendenhall, R. Schrimpf, K. Warren, D. Ball, L. Massengill, K. Label, and J. Howard, "Role of heavy-ion nuclear reactions in determining on-orbit single event rates," IEEE Trans. Nucl. Sci., vol. 52, no. 6, Dec. 2005.
7. K. Warren, R. Weller, R. Reed, D. Ball, M. Alles, L. Massengill, R. Schrimpf, M. Mendenhall, C. Howe, B. Olson, N. Haddad, S. Doyle, D. McMorrow, J. Melinger, and W. Lotshaw, "The contribution of nuclear reactions to single event upset cross-section measurements in a high-density SEU hardened SRAM technology," IEEE Trans. Nucl. Sci., vol. 52, no. 6, Dec. 2005.
8. W. Shockley, "Problems related to p-n junctions in silicon," Solid State Electron., vol. 2, pp. 35-67, 1961.
9. B. Olson, D. Ball, K. Warren, L. Massengill, N. Haddad, and D. Mc-Morrow, "Simultaneous SE charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design," IEEE Trans. Nucl. Sci., vol. 52, no. 6, Dec. 2005.