Wavelength dependence of transient laser-induced latchup in Epi-CMOS test structures

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 3059-3065

  LaLumondiere, Stephen D ^a   Koga, Rocky ^a   Osborn, Jon V ^a   Mayer, Donald C ^a   Lacoe, Ronald C ^a   Moss, Steven C ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

Cmos; Epitaxial; Laser; Latchup; Picosecond; Single event effects

Indexed keywords

ELEMENTARY PARTICLES; EPITAXIAL GROWTH; LASER PULSES; LASERS; THRESHOLD VOLTAGE;

LATCHUP;

CMOS INTEGRATED CIRCUITS;

EID: 0036957353     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805381     Document Type: Conference Paper

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