Total-dose tolerance of a chartered semiconductor 0.35-μm CMOS process

IEEE Radiation Effects Data Workshop

Volumn , Issue , 1999, Pages 82-86

  Lacoe, R C ^a   Osborn, J V ^a   Mayer, D C ^a   Witczak, S C ^a   Brown, S ^a   Robertson, R ^a   Hunt, D R ^a  

^a AEROSPACE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIGITAL INTEGRATED CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT TESTING; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOS CAPACITORS; OSCILLATORS (ELECTRONIC); RADIATION EFFECTS; RADIATION HARDENING; THRESHOLD VOLTAGE;

TOTAL DOSE IRRADIATION; TOTAL DOSE TOLERANCE;

MOSFET DEVICES;

EID: 0033342341     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)