Radiation-induced multi-bit upsets in SRAM-based FPGAs

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2455-2461

  Quinn, Heather ^a   Graham, Paul ^a   Krone, Jim ^a   Caffrey, Michael ^a   Rezgui, Sana ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b XILINX INC   (United States)

Author keywords

Field programmable gate arrays; Heavy ions; Proton radiation effects

Indexed keywords

HEAVY IONS; PARAMETER ESTIMATION; PROTONS; RADIATION EFFECTS; STATIC RANDOM ACCESS STORAGE;

MULTI-BIT UPSETS (MBU); PROTON RADIATION EFFECTS; STATIC SATURATION CROSS-SECTIONS; TRIPLE-MODULAR REDUNDANCY;

FIELD PROGRAMMABLE GATE ARRAYS;

EID: 33144478471     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860742     Document Type: Conference Paper

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