A new total-dose-induced parasitic effect in enclosed-geometry transistors

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2495-2502

  Nowlin, R N ^a,b   McEndree, S R ^b   Wilson, A L ^a,b   Alexander, D R ^a,c  

^a IEEE   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Complementary metal oxide semiconductor (CMOS); Edge leakage current; Hardening by design; Radiation effects

Indexed keywords

EDGE LEAKAGE CURRENT; HARDENING-BY-DESIGN; PARASITIC EFFECT; RINGED-SOURCE TRANSISTORS;

ELECTRIC CURRENTS; ELECTRON TUBES; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; RADIATION EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 33144470419     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860713     Document Type: Conference Paper

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