Impact of technology trends on SEJJ in CMOS SRAMs

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2797-2804

  Dodd, P E ^a   Sexton, F W ^a   Hash, G L ^a   Shaneyfelt, M R ^a   Draper, B L ^a   Farino, A J ^a   Flores, R S ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; RADIATION HARDENING; RANDOM ACCESS STORAGE;

SINGLE EVENT UPSETS (SEU);

RADIATION EFFECTS;

EID: 0030350091     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556869     Document Type: Article

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