Silicate formation at the interface of Hf-oxide as a high-k dielectrics and Si(0 0 1) surfaces

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 934-939

  Schmeisser D ^a   Zschech, E ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Hf oxide; Hf silicate; High k dielectric

Indexed keywords

CHEMICAL BONDS; INTERFACES (MATERIALS); PERMITTIVITY; PHOTOELECTRON SPECTROSCOPY; SILICATES; SYNCHROTRON RADIATION; THIN FILMS;

ABSORPTION BAND; GATE STACKS; HAFNIUM OXIDES; RESONANT PROFILES;

HAFNIUM COMPOUNDS;

EID: 33846173932     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.046     Document Type: Article

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