TDDB reliability prediction based on the statistical analysis of hard breakdown including multiple soft breakdown and wear-out

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 501-504

  Sahhaf, S ^a,b   Degraeve, R ^a   Roussel, Ph J ^a   Kauerauf, T ^a   Kaczer, B ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; RELIABILITY; RELIABILITY ANALYSIS;

HARD BREAKDOWN; RELIABILITY PREDICTIONS; SOFT BREAKDOWN; STATISTICAL ANALYSIS; THIN GATE OXIDES; TIME-DEPENDENT-DIELECTRIC-BREAKDOWN;

MOSFET DEVICES;

EID: 48649086507     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418984     Document Type: Conference Paper

References (5)

1. A. Kerber, M. Röhner, T. Pompl, R. Duschl, M. Kerber, "Lifetime prediction for cmos devices with ultra thin gate oxides based on progressive breakdown", Int. Reliability Physics Symposium, pp. 217-220, 2007.
2. Ph. Roussel, R. Degraeve, S. Sahhaf, G. Groeseneken," A consistent model for the hard breakdown distribution including digital soft breakdown: the noble art of area scaling", Microelectronic Engineering, Vol. 84, Issue 9-10, pp. 1925-1928, 2007.
3. B. Kaczer, R. Degraeve, R. O'Connor, Ph. Roussel, G. Groeseneken, "Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT∼1 nm) SiON films," IEDM Techn. Dig., pp. 713-716, 2004.
4. E. Wu, E.J. Nowak, R.-P. Vollertsen, L.-K. Han, "Weibull breakdown characteristics and oxide thickness uniformity", IEEE Transactions on Electron Dev., Vol. 47, Issue 12, pp. 2301-2309, 2000.
5. BD power-law for voltage dependence of oxide breakdown in ultra thin gate oxides" IEEE Trans. on Electron Dev., vol. 49, no. 12, pp. 2244-2253, 2002.