Impact of nitrogen on PBTI characteristics of HfSiON/TiN gate stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 325-328

  Krishnan, Siddarth A ^a,b   Quevedo Lopez, Manuel ^b,c   Li, Hong Jyh ^b,c   Kirsch, Paul ^b,d   Choi, Rino ^b   Young, Chadwin ^b   Peterson, Jeff J ^b,e   Lee, Byoung Hun ^b,d   Bersuker, Gennadi ^b   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c TI ^*

^d IBM   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCED POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI); PLASMA NITROGEN; THERMAL NITRIDATION;

CHARGE TRAPPING; HAFNIUM COMPOUNDS; NITRIDATION; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

THIN FILMS;

EID: 34250773443     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251237     Document Type: Conference Paper

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7. Quevedo et al., presented at IEDM, Dec. 2005.
8. Krishnan et al., presented at IIRW, Oct. 2005.
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10. Koyoma et al., IEDM, p. 857, 2002.