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Volumn , Issue , 2006, Pages 172-178

Concept for body coupling in SOI MOS transistors to improve multi-finger triggering

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SNAPBACK; ESD PERFORMANCE; FAILURE CURRENTS; FULLY SILICIDED DEVICES; GATE LENGTH; MOS TRANSISTORS; NONUNIFORM; SILICIDE-BLOCKED; SOI TECHNOLOGY;

EID: 70450210552     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EOSESD.2006.5256784     Document Type: Conference Paper
Times cited : (14)

References (12)
  • 2
    • 70450146991 scopus 로고    scopus 로고
    • Local Floating Body Effect in Body-grounded SO1 nMOSFETs
    • Y.-C. Tseng et al., "Local Floating Body Effect in Body-grounded SO1 nMOSFETs", SOI conference 1997
    • (1997) SOI conference
    • Tseng, Y.-C.1
  • 4
    • 84904171545 scopus 로고    scopus 로고
    • A. Deckelmann et al., Optimization of LGate for ggNMOS ESD protection devices fabricated on Bulk- and SOI-Substrates, using Process and Device Simulation, SISPAD 2003.
    • A. Deckelmann et al., "Optimization of LGate for ggNMOS ESD protection devices fabricated on Bulk- and SOI-Substrates, using Process and Device Simulation", SISPAD 2003.
  • 9
    • 0039439643 scopus 로고
    • A lateral, unidirectional, bipolar-type insulated-gate transistor - A novel semiconductor device
    • March
    • Y. Oomura, "A lateral, unidirectional, bipolar-type insulated-gate transistor - A novel semiconductor device", Appl. Phys. Lett 40(6), March 1982
    • (1982) Appl. Phys. Lett , vol.40 , Issue.6
    • Oomura, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.