Origin of basal plane bending in hexagonal silicon carbide single crystals

Journal of Crystal Growth

Volumn 310, Issue 18, 2008, Pages 4126-4131

  Lee, J W ^a   Skowronski, M ^a   Sanchez, E K ^b   Chung, G ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b DOW CORNING CORPORATION   (United States)

Author keywords

A1. Characterization; A1. Line defects; A2. Single crystal growth; B2. Semiconducting materials

Indexed keywords

BENDING (DEFORMATION); BURGERS VECTOR; CRYSTALLOGRAPHY; CRYSTALS; DEFORMATION; DIFFRACTION; DISLOCATIONS (CRYSTALS); ELECTRON MICROSCOPES; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MATERIALS SCIENCE; NONMETALS; PLASTICS; POWDERS; SILICON; SILICON CARBIDE; VAPORS;

A1. CHARACTERIZATION; A1. LINE DEFECTS; A2. SINGLE CRYSTAL GROWTH; B2. SEMICONDUCTING MATERIALS; BASAL PLANE DISLOCATIONS; BASAL PLANES; CRYSTAL DIAMETER; DEFECT-SELECTIVE ETCHING; DIFFRACTION PEAKS; GROWTH DIRECTIONS; HALF PLANES; HIGH RESOLUTION X-RAY DIFFRACTION; PHYSICAL VAPOR TRANSPORT; PHYSICAL VAPOR TRANSPORT GROWTH; TRANSMISSION ELECTRON;

SINGLE CRYSTALS;

EID: 49749103585     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.042     Document Type: Article

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