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Volumn 90, Issue 6, 2002, Pages 969-986

Silicon carbide benefits and advantages for power electronics circuits and systems

Author keywords

Applications; Converters; Devices; Material; Power devices; Power electronics; Power systems; Silicon carbide

Indexed keywords

GALLIUM NITRIDE; MATERIALS; SEMICONDUCTOR DEVICES; SILICON CARBIDE; THERMAL CONDUCTIVITY; THYRISTORS;

EID: 33646891147     PISSN: 00189219     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPROC.2002.1021562     Document Type: Review
Times cited : (441)

References (82)
  • 1
    • 0034313447 scopus 로고    scopus 로고
    • Recent developments of high power converters for industry and traction applications
    • Nov.
    • S. Bernet, "Recent developments of high power converters for industry and traction applications," IEEE Trans. Power Electron., vol. 15, pp. 1102-1117, Nov. 2000.
    • (2000) IEEE Trans. Power Electron. , vol.15 , pp. 1102-1117
    • Bernet, S.1
  • 5
    • 0029322332 scopus 로고
    • Introducing custom power
    • June
    • N. Hingorani, "Introducing custom power," IEEE Spectrum, vol. 32, pp. 41-48, June 1995.
    • (1995) IEEE Spectrum , vol.32 , pp. 41-48
    • Hingorani, N.1
  • 6
    • 0027579586 scopus 로고
    • Flexible ac transmission
    • Apr.
    • _, "Flexible ac transmission," IEEE Spectrum, vol. 30, pp. 40-45, Apr. 1993.
    • (1993) IEEE Spectrum , vol.30 , pp. 40-45
  • 7
    • 33646870725 scopus 로고
    • Power electronics in electric utilities: HVDC power transmission systems
    • Apr.
    • F. Nozari and H. S. Patel, "Power electronics in electric utilities: HVDC Power Transmission Systems," Proc. IEEE, vol. 76, pp. 495-506, Apr. 1988.
    • (1988) Proc. IEEE , vol.76 , pp. 495-506
    • Nozari, F.1    Patel, H.S.2
  • 8
    • 84866028598 scopus 로고
    • Power electronics in electric utilities: Static var compensators
    • Apr.
    • L. Gyugyi, "Power electronics in electric utilities: Static Var Compensators," in Proc. IEEE, vol. 76, Apr. 1988, pp. 483-194.
    • (1988) Proc. IEEE , vol.76 , pp. 483-1194
    • Gyugyi, L.1
  • 11
    • 0026678408 scopus 로고
    • Practical application of MOSFET synchronous rectifiers
    • Nov.
    • J. Blanc, "Practical application of MOSFET synchronous rectifiers," in Proc. 13th Int. Conf. Telecommunications Energy, Nov. 1991, pp. 495-501.
    • (1991) Proc. 13th Int. Conf. Telecommunications Energy , pp. 495-501
    • Blanc, J.1
  • 17
    • 0024749835 scopus 로고
    • Power semiconductor device figure of merit for high-frequency applications
    • Oct.
    • B. J. Baliga, "Power semiconductor device figure of merit for high-frequency applications," IEEE Electron Device Lett., vol. 10, pp. 455-457, Oct. 1989.
    • (1989) IEEE Electron Device Lett. , vol.10 , pp. 455-457
    • Baliga, B.J.1
  • 25
    • 0024737721 scopus 로고
    • Optimum semiconductors for high power electronics
    • Sept.
    • K. Shenai, R. S. Scott, and B. J. Baliga, "Optimum semiconductors for high power electronics," IEEE Trans. Electron Devices, vol. 36, pp. 1811-1823, Sept. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1811-1823
    • Shenai, K.1    Scott, R.S.2    Baliga, B.J.3
  • 26
    • 21344498986 scopus 로고
    • Examination of semiconductors for bipolar power devices
    • A. Bhalla and T. P. Chow, "Examination of semiconductors for bipolar power devices," Proc. Inst. Phys. Conf., no. 137, p. 621, 1994.
    • (1994) Proc. Inst. Phys. Conf. , Issue.137 , pp. 621
    • Bhalla, A.1    Chow, T.P.2
  • 27
    • 0028706650 scopus 로고
    • Bipolar power device performance: Dependence on materials, lifetime and device ratings
    • A. Bhalla and T. P. Chow, "Bipolar power device performance: dependence on materials, lifetime and device ratings," in Proc. 6th Int. Symp. Power Semiconductor Devices and ICs, 1994, pp. 287-292.
    • (1994) Proc. 6th Int. Symp. Power Semiconductor Devices and ICs , pp. 287-292
    • Bhalla, A.1    Chow, T.P.2
  • 28
    • 0028485013 scopus 로고
    • Wide bandgap compound semiconductors for superior high-voltage power devices
    • T. P. Chow and R. Tyagi, "Wide bandgap compound semiconductors for superior high-voltage power devices," IEEE Trans. Electron Devices, vol. 41, pp. 1481-1482, 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1481-1482
    • Chow, T.P.1    Tyagi, R.2
  • 31
    • 0026940017 scopus 로고
    • Silicon carbide high-voltage (400V) Schottky barrier diodes
    • Oct.
    • M. Bhatnagar, P. K. McLarty, and B. J. Baliga, "Silicon carbide high-voltage (400V) Schottky barrier diodes," IEEE Electron Device Lett., vol. 13, pp. 501-503, Oct. 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , pp. 501-503
    • Bhatnagar, M.1    McLarty, P.K.2    Baliga, B.J.3
  • 33
    • 0011643066 scopus 로고
    • Low power-loss 4H-SiC Schottky rectifiers with high blocking voltage
    • A. Itoh, T. Kimoto, and H. Matsunami, "Low power-loss 4H-SiC Schottky rectifiers with high blocking voltage," in Proc. Inst. Phys. Conf., 1995. pp. 689-692.
    • (1995) Proc. Inst. Phys. Conf. , pp. 689-692
    • Itoh, A.1    Kimoto, T.2    Matsunami, H.3
  • 34
    • 0029345172 scopus 로고
    • The guard-ring termination for the high-voltage SiC Schottky barrier diodes
    • July
    • K. Ueno, T. Urushidani, K. Hashimoto, and Y. Seki, "The guard-ring termination for the high-voltage SiC Schottky barrier diodes," IEEE Electron Device Lett., vol. 16, pp. 331-332, July 1995.
    • (1995) IEEE Electron Device Lett. , vol.16 , pp. 331-332
    • Ueno, K.1    Urushidani, T.2    Hashimoto, K.3    Seki, Y.4
  • 37
    • 0031675662 scopus 로고    scopus 로고
    • High voltage 4H SiC rectifiers using Pt and Ni metallization
    • V. Saxena and A. J. Steckl, "High voltage 4H SiC rectifiers using Pt and Ni metallization," Mater. Sci. Forum, vol. 264-268, pp. 937-940, 1998.
    • (1998) Mater. Sci. Forum , vol.264-268 , pp. 937-940
    • Saxena, V.1    Steckl, A.J.2
  • 40
    • 0032121583 scopus 로고    scopus 로고
    • Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers
    • July
    • K. J. Schoen, J. M. Woodall, J. A. Cooper Jr., and M. R. Melloch, "Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers," IEEE Trans. Electron Devices, vol. 45, pp. 1595-1604, July 1998.
    • (1998) IEEE Trans. Electron Devices , vol.45 , pp. 1595-1604
    • Schoen, K.J.1    Woodall, J.M.2    Cooper Jr., J.A.3    Melloch, M.R.4
  • 41
    • 0032182966 scopus 로고    scopus 로고
    • Effect of reactive ion etch-damage on the performance of 4H-SiC Schottky barrier diodes
    • Oct.
    • V. Khemka, T. P. Chow, and R. J. Gutmann, "Effect of reactive ion etch-damage on the performance of 4H-SiC Schottky barrier diodes," J. Electron. Mater., vol. 27, no. 10, pp. 1128-1135, Oct. 1998.
    • (1998) J. Electron. Mater. , vol.27 , Issue.10 , pp. 1128-1135
    • Khemka, V.1    Chow, T.P.2    Gutmann, R.J.3
  • 46
    • 0032290493 scopus 로고    scopus 로고
    • Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+/n junction rectifiers
    • Dec.
    • P. Neudeck, W. Huang, and M. Dudley, "Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+/n junction rectifiers,"Solid-State Electron., vol.42, no. 12, pp. 2157-2164, Dec. 1998.
    • (1998) Solid-state Electron. , vol.42 , Issue.12 , pp. 2157-2164
    • Neudeck, P.1    Huang, W.2    Dudley, M.3
  • 47
    • 0033682705 scopus 로고    scopus 로고
    • MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation
    • Oct.
    • H. Yano, T. Kimoto, H. Matsunami, M. Blasser, and G. Pensl, "MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation," Mater. Sci. Forum, vol. 338-342, pp. 1109-1112, Oct. 1999.
    • (1999) Mater. Sci. Forum , vol.338-342 , pp. 1109-1112
    • Yano, H.1    Kimoto, T.2    Matsunami, H.3    Blasser, M.4    Pensl, G.5
  • 48
    • 0000397834 scopus 로고    scopus 로고
    • Effect of nitride oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
    • Mar.
    • G. Y. Chung, C. C. Tin, J. R. Williams, J. K. McDonald, M. Di Vantra, S. T. Pantelides, L. C. Feldman, and R. A. Weller, "Effect of nitride oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide," Appl. Phys. Lett., vol. 76, no. 13, pp. 1713-1715, Mar. 2000.
    • (2000) Appl. Phys. Lett. , vol.76 , Issue.13 , pp. 1713-1715
    • Chung, G.Y.1    Tin, C.C.2    Williams, J.R.3    McDonald, J.K.4    Di Vantra, M.5    Pantelides, S.T.6    Feldman, L.C.7    Weller, R.A.8
  • 49
    • 33646896662 scopus 로고    scopus 로고
    • N2O processing improves the 4H-SiC: SiO2 interface
    • Tsukuba, Japan, Oct.-Nov.
    • L. Lipkin, "N2O processing improves the 4H-SiC: SiO2 interface," presented at the ICSCRM, Tsukuba, Japan, Oct.-Nov. 2001.
    • (2001) ICSCRM
    • Lipkin, L.1
  • 50
    • 0034860346 scopus 로고    scopus 로고
    • Status, prospects and commercialization of SiC power devices
    • South Bend, IN, June
    • D. Stephani, "Status, prospects and commercialization of SiC power devices," presented at the 59th Annu. Device Research Conf., South Bend, IN, June 2001.
    • (2001) 59th Annu. Device Research Conf.
    • Stephani, D.1
  • 51
    • 33646887157 scopus 로고    scopus 로고
    • Silicon Carbide - Materials, Processing, and Devices, Boston, MA
    • [51 ] Proc. Materials Research Society, vol. 640, Silicon Carbide - Materials, Processing, and Devices, Boston, MA, 2000.
    • (2000) Proc. Materials Research Society , vol.640
  • 54
    • 0035821651 scopus 로고    scopus 로고
    • Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor
    • June
    • W. Wright, J. Carter, P. Alexandrov, P. Pan, M. Weiner, and J. H. Zhao, "Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor," Electron. Lett., vol. 37, no. 12, pp. 787-788, June 2001.
    • (2001) Electron. Lett. , vol.37 , Issue.12 , pp. 787-788
    • Wright, W.1    Carter, J.2    Alexandrov, P.3    Pan, P.4    Weiner, M.5    Zhao, J.H.6
  • 55
    • 0035305734 scopus 로고    scopus 로고
    • SiC devices for advanced power and high-temperature applications
    • Apr.
    • W. Wondrak, R. Held, E. Niemann, and U. Schmid, "SiC devices for advanced power and high-temperature applications," IEEE Trans. Ind. Electron., vol. 48, no. 2, pp. 307-308, Apr. 2001.
    • (2001) IEEE Trans. Ind. Electron. , vol.48 , Issue.2 , pp. 307-308
    • Wondrak, W.1    Held, R.2    Niemann, E.3    Schmid, U.4
  • 56
  • 57
    • 0035302051 scopus 로고    scopus 로고
    • Recent progress and current issues in SiC semiconductor devices for power applications
    • Apr.
    • C. M. Johnson 〈etal〉, "Recent progress and current issues in SiC semiconductor devices for power applications," IEE Proc. Circuits Devices Systems, vol. 148, no. 2, pp. 101-108, Apr. 2001.
    • (2001) IEE Proc. Circuits Devices Systems , vol.148 , Issue.2 , pp. 101-108
    • Johnson, C.M.1
  • 58
    • 33645565526 scopus 로고    scopus 로고
    • SiC Schottky diodes reach the market
    • Apr.
    • R. Rupp, "SiC Schottky diodes reach the market," Compound Semiconductor Mag., vol. 7, no. 3, Apr. 2001.
    • (2001) Compound Semiconductor Mag. , vol.7 , Issue.3
    • Rupp, R.1
  • 59
    • 33646879126 scopus 로고    scopus 로고
    • Microsemi launches second-generation line of silicon carbide power Schottkies
    • press release, May 16
    • "Microsemi launches second-generation line of silicon carbide power Schottkies," Compound Semiconductor Mag., press release, May 16, 2001.
    • (2001) Compound Semiconductor Mag.
  • 60
    • 33646864221 scopus 로고    scopus 로고
    • SiC and GaN high-voltage power switching devices
    • Research Triangle Park, NC
    • T. P. Chow, "SiC and GaN high-voltage power switching devices," in Proc. Int. Conf. Silicon Carbide and Related Materials, Research Triangle Park, NC, 1999, pp. 1155-1160.
    • (1999) Proc. Int. Conf. Silicon Carbide and Related Materials , pp. 1155-1160
    • Chow, T.P.1
  • 61
    • 0033100055 scopus 로고    scopus 로고
    • Evaluation of high-voltage 4H-SiC switching devices
    • Mar.
    • J. Wang and B. W. Williams, "Evaluation of high-voltage 4H-SiC switching devices," IEEE Trans. Electron Devices, vol. 46, pp. 589-597, Mar. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , pp. 589-597
    • Wang, J.1    Williams, B.W.2
  • 63
  • 64
    • 0029756556 scopus 로고    scopus 로고
    • Auxiliary series resonant converter: A new converter for high-voltage, high-power applications
    • V. Vlatkovic, M. J. Schutten, and R. Steigerwald, "Auxiliary series resonant converter: A new converter for high-voltage, high-power applications," in Proc. IEEE Applied Power Electronic Conf., 1996, pp. 493-499.
    • (1996) Proc. IEEE Applied Power Electronic Conf. , pp. 493-499
    • Vlatkovic, V.1    Schutten, M.J.2    Steigerwald, R.3
  • 65
    • 84858904451 scopus 로고    scopus 로고
    • Philips. [Online]
    • High Voltage Diode Data Sheet, Philips. [Online]. Available: http://www.semiconductors.philips.com/acrobat/datasheets/BY8100_2.pdf
    • High Voltage Diode Data Sheet
  • 67
    • 0034432660 scopus 로고    scopus 로고
    • Silicon carbide power electronics for high temperature applications
    • K. Shenai and M. Trivedi, "Silicon carbide power electronics for high temperature applications," in Proc. IEEE Aerospace Conf., vol. 5, 2000, pp. 431-437.
    • (2000) Proc. IEEE Aerospace Conf. , vol.5 , pp. 431-437
    • Shenai, K.1    Trivedi, M.2
  • 68
    • 0002266042 scopus 로고
    • Progress toward high temperature, high power SiC devices
    • Compound Semiconductors
    • P. G. Neudeck, "Progress toward high temperature, high power SiC devices," in Proc. Inst. Phys. Conf., vol. 141, Compound Semiconductors, 1994, pp. 1-6.
    • (1994) Proc. Inst. Phys. Conf. , vol.141 , pp. 1-6
    • Neudeck, P.G.1
  • 70
    • 0035304065 scopus 로고    scopus 로고
    • Review on materials, microsensors, systems, and devices for high-temperature and harsh-environment applications
    • Apr.
    • M. R. Werner and W. R. Fahrner, "Review on materials, microsensors, systems, and devices for high-temperature and harsh-environment applications," IEEE Trans. Ind. Electron., vol. 48, pp. 249-257, Apr. 2001.
    • (2001) IEEE Trans. Ind. Electron. , vol.48 , pp. 249-257
    • Werner, M.R.1    Fahrner, W.R.2
  • 72
    • 0030127790 scopus 로고    scopus 로고
    • High-voltage dc transmission: A power electronics workhorse
    • Apr.
    • N. G. Hingorani, "High-voltage dc transmission: A power electronics workhorse," IEEE Spectrum, vol. 33, pp. 63-72, Apr. 1996.
    • (1996) IEEE Spectrum , vol.33 , pp. 63-72
    • Hingorani, N.G.1
  • 73
    • 0032288163 scopus 로고    scopus 로고
    • Megawatt solid-state electronics
    • E. R. Brown, "Megawatt solid-state electronics," Solid-State Electron., vol. 42, no. 12, pp. 2119-2130, 1998.
    • (1998) Solid-State Electron. , vol.42 , Issue.12 , pp. 2119-2130
    • Brown, E.R.1
  • 79
    • 0033307840 scopus 로고    scopus 로고
    • All solid state switched pulser for air pollution control system
    • Y. Chung, C. Yang, and H. Kim, "All solid state switched pulser for air pollution control system," in Proc. 12th IEEE Int. Pulsed Power Conf., vol. 1, 1999, pp. 177-180.
    • (1999) Proc. 12th IEEE Int. Pulsed Power Conf. , vol.1 , pp. 177-180
    • Chung, Y.1    Yang, C.2    Kim, H.3
  • 80
    • 0033326367 scopus 로고    scopus 로고
    • Single shot and burst repetitive operation of involute gate 125mm symmetric thyristors up to 221kA with a di/dt of 2k A/ s
    • T. F. Podlesak and F. M. Simon, "Single shot and burst repetitive operation of involute gate 125mm symmetric thyristors up to 221kA with a di/dt of 2k A/ s," in Proc. 12th IEEE Int. Pulsed Power Conf., vol. 1, 1999, pp. 206-209.
    • (1999) Proc. 12th IEEE Int. Pulsed Power Conf. , vol.1 , pp. 206-209
    • Podlesak, T.F.1    Simon, F.M.2
  • 82
    • 0035124336 scopus 로고    scopus 로고
    • The Hobetron-a high power vacuum electronic switch
    • Jan.
    • R. B. True, R. J. Hansen, and G. R. Good, "The Hobetron-a high power vacuum electronic switch," IEEE Trans. Electron Devices, vol. 48, pp. 122-128, Jan. 2001.
    • (2001) IEEE Trans. Electron Devices , vol.48 , pp. 122-128
    • True, R.B.1    Hansen, R.J.2    Good, G.R.3


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