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Volumn 264-268, Issue pt 1, 1998, Pages 399-408
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Extended defects in SiC and GaN semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
DISLOCATIONS (CRYSTALS);
SEMICONDUCTING GALLIUM COMPOUNDS;
SILICON CARBIDE;
TETRAHEDRALLY BONDED SEMICONDUCTORS;
SILICON WAFERS;
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EID: 0031700730
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.264-268.399 Document Type: Article |
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Times cited : (17)
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References (39)
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