Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Crystal Growth and Design

Volumn 2, Issue 3, 2002, Pages 213-220

  Ma, Ronghui ^a   Zhang, Hui ^a   Prasad, Vish ^b   Dudley, Michael ^a  

^a Stony Brook University   (United States)

^b FLORIDA INTERNATIONAL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000741328     PISSN: 15287483     EISSN: None     Source Type: Journal    
DOI: 10.1021/cg015572p     Document Type: Article

References (19)

1. Dhanaraj, G.; Huang, X. R.; Dudley, M.; Prasad, V.; Ma, R.-H., "Silicon Carbide Crystals - Part I: Growth and Characterization", In Crystal Growth for Modern Technology; Byrappa, K., Ohachi, T., Eds.; WIT Press: Southampton, UK, 2001.
2. Chen, Q.-S.; Prasad, V.; Zhang, H.; Dudley, M. "Silicon Carbide Crystals - Part II: Process Physics and Modeling", In Crystal Growth for Modern Technology; Byrappa, K., Ohachi, T., Eds.; WIT Press: Southampton, UK, 2001.
3. Segal, A. S.; Vorob'ev, A. N.; Karpov, S. Yu.; Makarov, Yu. N.; Mokhov, E. N.; Ramm, M. G.; Ramm, M. S.; Roenkov, A. D.; Vodakov, Yu. A.; Zhmakin, A. I. Mater. Sci. Eng. B 1999, 61-62, 40.
4. Pons, M.; Anikin, M.; Chourou, K.; Dedulle, J. M.; Madar, R.; Blanquet, E.; Pisch, A.; Bernard, C.; Grosse, P.; Faure, C.; Basset, G.; Grange, Y. Mater. Sci. Eng. B 1999, 61-62, 18.
5. Selder, M.; Kadinski, L.; Durst, F.; Straubinger, T.; Hofmann, D. 1999, Mater. Sci. Eng. B 1999, 61-62, 93.
6. Chen, Q.-S.; Zhang, H.; Ma, R.-H.; Prasad, V. J. Cryst. Growth 2001, 225, 299
7. Räback, p.; Yakimova, R.; Syväjärvi, M.; Nieminen, R.; Janzén, E. Mater. Sci. Eng. B 1999, 61-62, 89.
8. Ha, S.; Rohrer, G. S.; Skowronski, M.; Heydemann V. D.; Snyder, D. W. Mater. Sci. Forum 2000, 338-342, 67
9. Karpov, S.Yu; Kulik, A. V.; Zhmakin, I. A.; Makarov, Yu. N.; Mokhov, E. N.; Ramm, M. G.; Ramm, M. S.; Roenkov, A. D.; Vodakov, Yu. A. J. Cryst. Growth 2000, 211, 347.
10. Muller, St. G.; Glass, R. C.; Hobgood, H. M.; Tsvetkov, V. F.; Brady, M.; Henshall D.; Jenny, J. R.; Malta, D.; Carter, C. H., Jr. J. Cryst. Growth 2000, 211, 325.
11. Hofmann, D.; Bickermann, M.; Eckstein, R.; Kölbl, M.; Müller, St. G.; Schmitt, E.; Weber, A.; Winnacker, A. J. Cryst. Growth 1999, 198/199, 1005.
12. Lilov, S. K. Mater. Sci. Eng. B 1993, 21, 65.
13. Kaldis, E.; Piechotka, M. In Handbook of Crystal Growth; Elsevier: Amsterdam, 1994; Vol. 2.
14. Ma, R.-H.; Chen, Q.-S.; Zhang, H.; Prasad, V.; Balkas, C. M.; Yushin, N. K. J. Cryst. Growth 2000, 211, 352.
15. Timoshenko, S.; Goodier, J. N. Theory of Elasticity, 2nd ed.; McGraw-Hill: New York, 1951.
16. Kamitani, K.; Grimsditch, M.; Nipko, J. C.; Loong, C.-K. J. Appl. Phys. 1997, 82 (6), 3152-3154.
17. Li, Z.; Bradt, R. C. Am. Soc. Ceram. 1986, 69, 863.
18. Wellann, P. J.; Bickermann, M.; Hofmann, D.; Kadinski, L.; Selder, M.; Straubinger, T. L.; Winnacker, A. Mater. Sci. Forum 2000, 338-342, 71.
19. Jordan, A. S.; Von Neida A. R.; Caruso, R. J. Appl. Phys. 1981, 52, 3331.