Behavior of basal plane dislocations in hexagonal silicon carbide single crystals grown by physical vapor transport

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 A, 2006, Pages 1738-1742

  Ohtani, Noboru ^a   Katsuno, Masakazu ^a   Tsuge, Hiroshi ^a   Fujimoto, Tatsuo ^a   Nakabayashi, Masashi ^a   Yashiro, Hirokatsu ^a   Sawamura, Mitsuru ^a   Aigo, Takashi ^a   Hoshino, Taizo ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

Basal plane dislocations; Crystal growth; SiC; Single crystal

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; PHYSICAL VAPOR DEPOSITION; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

BASAL PLANE DISLOCATIONS; EDGE DISLOCATIONS; POST-GROWTH COOLING;

SILICON CARBIDE;

EID: 33644978265     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1738     Document Type: Article

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