Status of SiC bulk growth from an industrial point of view

Journal of Crystal Growth

Volumn 211, Issue 1, 2000, Pages 325-332

  Müller, St G ^a   Glass, R C ^a   Hobgood, H M ^a   Tsvetkov, V F ^a   Brady, M ^a   Henshall, D ^a   Jenny, J R ^a   Malta, D ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); GEMS; HEAT TRANSFER; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES; THERMOELASTICITY;

MICROPIPE; MOISSANITE; THERMOELASTIC STRESS; VAPOR GROWTH;

CRYSTAL GROWTH;

EID: 0042977079     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00835-0     Document Type: Article

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