Growth and properties of the dilute bismide semiconductor GaAs 1-xBix a complementary alloy to the dilute nitrides

International Journal of Nanotechnology

Volumn 5, Issue 9-12, 2008, Pages 963-983

  Tiedje, T ^a,c   Young, E C ^a   Mascarenhas, A ^b,d,e  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c ROYAL SOCIETY OF CANADA   (Canada)

^d Experimental Materials Sciences Section

^e NREL

Author keywords

Epitaxial semiconductor films; Molecular beam epitaxy of bismides

Indexed keywords

ALLOYING; ALLOYING ELEMENTS; BISMUTH ALLOYS; ELECTRON MOBILITY; ENERGY GAP; GALLIUM ALLOYS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM; VALENCE BANDS;

COMPOUND SEMICONDUCTORS; CONDUCTION-BAND MINIMUM; DILUTE NITRIDE ALLOYS; EPITAXIAL SEMICONDUCTOR FILMS; MOLECULAR BEAM EPITAXY OF BISMIDES; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SPIN-ORBIT SPLITTINGS; VALENCE-BAND MAXIMUMS;

SEMICONDUCTOR ALLOYS;

EID: 49449114171     PISSN: 14757435     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJNT.2008.019828     Document Type: Article

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