Surfactant enhanced growth of GaNAs and InGaNAs using bismuth

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 449-454

  Tixier, S ^a   Adamcyk, M ^a,c   Young, E C ^b   Schmid, J H ^a   Tiedje, T ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b UBC Vancouver   (Canada)

^c Lytek Corporation   (United States)

Author keywords

A1. Photoluminescence; A1. Surface roughness; A1. Surfactant; B1. Bismuth; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

BISMUTH; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS;

SINGLE QUANTUM WELLS;

CRYSTAL GROWTH;

EID: 0037382115     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02217-0     Document Type: Conference Paper

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