New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 PART A, 1998, Pages

  Oe, Kunishige ^a,b   Okamoto, Hiroshi ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

Metal organic vapor phase epitaxy; Metastable alloy; New semiconductor; Temperature insensitive

Indexed keywords

ENERGY GAP; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

TEMPERATURE-INSENSITIVE MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032208182     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1283     Document Type: Article

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