Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 371-374

  Yoshida, Junichi ^a   Kita, Takashi ^a   Wada, Osamu ^a   Oe, Kunishige ^b  

^a KOBE UNIVERSITY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaAsBi; MOVPE; Temperature insensitive band gap

Indexed keywords

BAND STRUCTURE; BISMUTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROSCOPY; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

BAND GAP ENERGY; FRANZ-KELDYSH OSCILLATION; PHOTOREFLECTANCE SPECTROSCOPY; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037667849     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.371     Document Type: Article

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