Sb and Bi surfactant effects on homo-epitaxy of GaAs on (0 0 1) patterned substrates

Journal of Crystal Growth

Volumn 265, Issue 3-4, 2004, Pages 367-374

  Wixom, R R ^a   Rieth, L W ^a   Stringfellow, G B ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

A1. Surface processes; A3. Lateral epitaxial growth; A3. Organometallic vapor phase epitaxy; B2. Semiconducting GaAs

Indexed keywords

ANISOTROPY; ANTIMONY; ATOMIC FORCE MICROSCOPY; BISMUTH; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION; METALLORGANIC VAPOR PHASE EPITAXY; REACTION KINETICS; SEMICONDUCTOR GROWTH; SOLUBILITY; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE;

LATERAL EPITAXIAL GROWTH; SURFACE PROCESSES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1942537097     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.019     Document Type: Article

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