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Volumn 279, Issue 3-4, 2005, Pages 316-320

Bismuth surfactant growth of the dilute nitride GaNxAs 1-x

(3) Young, E C a Tixier, S a Tiedje, T a

a UNIVERSITY OF BRITISH COLUMBIA (Canada)

Author keywords

A1. Desorption; A1. Reflection high energy electron diffraction; A1. Surface processes; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

BISMUTH; DESORPTION; FILM GROWTH; GALLIUM NITRIDE; ISOTHERMS; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR MATERIALS; SURFACE PHENOMENA; X RAY DIFFRACTION ANALYSIS;

LANGMUIR ISOTHERMS; NITROGEN INCORPORATION; SEMICONDUCTING III-V MATERIALS; SURFACE PROCESSES;

SURFACE ACTIVE AGENTS;

EID: 18444396623 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.02.045 Document Type: Article

Times cited : (78)

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