Band gaps of the dilute quaternary alloys GaN xas 1-x-yBi y and Ga 1-yin yN xas 1-x

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Tixier, S ^a   Webster, S E ^a   Young, E C ^a   Tiedje, T ^a   Francoeur, S ^b   Mascarenhas, A ^b   Wei, P ^c   Schiettekatte, F ^c  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CO-DOPING; QUATERNARY ALLOYS; SEMICONDUCTOR ALLOYS;

APPROXIMATION THEORY; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REDUCTION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 17944376887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1886254     Document Type: Article

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14. ij are the appropriate elastic constants. Parameter values were obtained by linear interpolation from GaAs and InAs data published by I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan [J. Appl. Phys. 89, 5815 (2001)]. Compressive strain was defined to be negative.
15. ij are the appropriate elastic constants. Parameter values were obtained by linear interpolation from GaAs and InAs data published by I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan [J. Appl. Phys. 89, 5815 (2001)]. Compressive strain was defined to be negative.