Ion beam characterization of GaAs1-x-yNxBi y epitaxial layers

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 671-675

  Wei, P ^a   Tixier, S ^b,d   Chicoine, M ^a   Francoeur, S ^c   Mascarenhas, A ^c   Tiedje, T ^b   Schiettekatte, F ^a  

^a ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^b UNIVERSITY OF BRITISH COLUMBIA   (Canada)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^d HONEYWELL   (United States)

Author keywords

Bi; Channeling; Elastic recoil detection; GaAsN; III V semiconductors; Nuclear reaction analysis; Rutherford backscattering spectrometry

Indexed keywords

ELASTICITY; EPITAXIAL GROWTH; ION BEAMS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITROGEN; NUCLEAR PHYSICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS;

CHANNELING; ELASTIC RECOIL DETECTION; GAASN; NUCLEAR REACTION ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROMETRY;

GALLIUM COMPOUNDS;

EID: 2342644082     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.140     Document Type: Conference Paper

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