GaAsNSb-base GaAs heterojunction bipolar transistor with a low turn-on voltage

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 3, 2006, Pages 1308-1310

  Lew, K L ^a   Yoon, S F ^a   Wang, H ^a   Wicaksono, S ^a   Gupta, J A ^b   McAlister, S P ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS;

CURRENT BLOCKING EFFECT; GAASNSB; TURN-ON VOLTAGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33744818895     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2200376     Document Type: Article

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