SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 29, Issue 6, 2001, Pages 395-404

Overcoming limitations in semiconductor alloy design

(4) Mascarenhas, A a Zhang, Yong a Verley, Jason a Seong, M J a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

Co doping; GaAs:N:Bi; GaP:N:Bi; Isoelectronic impurity

Indexed keywords

BISMUTH; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; LATTICE CONSTANTS; NITROGEN; SEMICONDUCTOR DOPING;

DILUTE NITRIDE ALLOY; ISOELECTRONIC CO-DOPING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035358678 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.2001.0984 Document Type: Article

Times cited : (29)

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