InGaP/GaAs-based multijunction solar cells

Progress in Photovoltaics: Research and Applications

Volumn 13, Issue 6, 2005, Pages 495-511

  Takamoto, Tatsuya ^a   Kaneiwa, Minoru ^a   Imaizumi, Mitsuru ^b   Yamaguchi, Masafumi ^c  

^a SHARP CORPORATION   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

Concentrator; GaAs; Multijunction; Radiation resistance; Solar cell; Thin film

Indexed keywords

CRYSTAL LATTICES; ENERGY DISSIPATION; ENERGY EFFICIENCY; ENERGY GAP; SEMICONDUCTING GALLIUM ARSENIDE; TECHNOLOGY; THIN FILMS;

CELL SIZE; CONCENTRATOR; MULTIJUNCTION; RADIATION RESISTANCE;

SOLAR CELLS;

EID: 25144479027     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.642     Document Type: Article

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