Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 1436-1440

  Johnson, S R ^a   Sadofyev, Yu G ^a   Ding, D ^a   Cao, Y ^a   Chaparro, S A ^a   Franzreb, K ^a   Zhang, Y H ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CHEMICAL BONDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRON TRANSITIONS; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTOELECTRONIC DEVICES; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; SURFACE TREATMENT;

GROWTH TEMPERATURES; ISOELECTRONIC DOPANTS; VERTICAL CAVITY SURFACE EMITTING LAYERS (VCSEL);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 3242733125     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1705579     Document Type: Conference Paper

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