Heterojunction bipolar transistors implemented with GaInNAs materials

Semiconductor Science and Technology

Volumn 17, Issue 8, 2002, Pages 898-906

  Asbeck, P M ^a   Welty, R J ^a   Tu, C W ^a   Xin, H P ^a   Welser, R E ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b KOPIN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BATTERIES; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; GAIN CONTROL; MOBILE TELECOMMUNICATION SYSTEMS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

SHEET RESISTANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036684054     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/17/8/319     Document Type: Article

References (17)

1. Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property
2. Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
3. GaInNAs: A novel material for long-wavelength semiconductor lasers
4. GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy
5. 1-xAs/GaAs heterojunctions and quantum wells
6. 0.98/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage
7. Gas-source molecular beam epitaxial growth and thermal annealing of GaInNAs/GaAs quantum wells
8. Use of thin AlGaAs and InGaAs stop-etch layers for reactive ion etch processing of III-V compound semiconductor devices
9. 2 plasma
10. Pathway for HBT turn-on voltage reduction on a GaAs platform
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12. Turn-on voltage investigation of GaAs-based bipolar transistors with GaInAsN base layers
13. Pnp InGaAsN-based HBT with graded base doping
14. High-speed performance of NpN InGaAsN-based double heterojunction bipolar transistors
15. Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base
16. Exploring physical mechanisms for sudden beta degradation in GaAs-based HBTs