Plasma doping for the fabrication of ultra-shallow junctions

Surface and Coatings Technology

Volumn 156, Issue 1-3, 2002, Pages 229-236

  Felch, S B ^a   Fang, Z ^a   Koo, B W ^a   Liebert, R B ^a   Walther, S R ^a   Hacker, D ^a  

^a Varian Semiconductor Equipment Associates   (United States)

Author keywords

Beamline implanted; Pulsed plasma doping; Sheet resistance; Ultra shallow junctions

Indexed keywords

ANNEALING; DOPING (ADDITIVES); FABRICATION; ION IMPLANTATION; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES;

PULSED PLASMA DOPING;

SILICON WAFERS;

PLASMA TREATMENT;

EID: 0036641559     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(02)00097-X     Document Type: Article

References (15)

1. Plasma doping system for 200 and 300 mm wafers
2. Comparison of ultra-shallow junctions with PLAD and beamline implantation
3. Direct comparison of electrical performance of 0.1 μm pMOSFETs doped by plasma doping or low energy ion implantation
4. Evaluation of plasma doping for sub-0.18 μm devices
5. Carrier illumination™ characterization of ultra-shallow junctions formed with plasma doping
6. Implant dosimetry results for plasma doping
7. Recent advances and continuing challenges in ultra-shallow junctions
8. Shallow junction formation by plasma immersion ion implantation
9. Study of laser thermal processing (LTP) to meet sub-130 nm node shallow junction requirements
10. High performance sub-0.2 μm gate length pMOSFETs with source/drain extensions fabricated by plasma doping
11. High Performance pMOSFET with BF3 plasma doped gate/source/drain and S/D extension